產(chǎn)品系列
CSD86336Q3DT
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 1.9V @ 250μA, 1.6V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds : 494pF @ 12.5V, 970pF @ 12.5V
Power - Max : 6W
Operating Temperature : -55°C ~ 125°C
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-VSON (3.3x3.3)
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