產(chǎn)品系列
CSD85312Q3E
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Source
FET Feature : Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 39A
Rds On (Max) @ Id, Vgs : 12.4 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id : 1.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 2390pF @ 10V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : 8-VSON (3.3x3.3)
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