產(chǎn)品系列
產(chǎn)品系列
NTP8G202NG
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Obsolete
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V
Rds On (Max) @ Id, Vgs : 350 mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id : 2.6V @ 500μA
Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
Vgs (Max) : ±18V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V
Power Dissipation (Max) : 65W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3
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