產(chǎn)品系列
TPS1120DR
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 15V
Current - Continuous Drain (Id) @ 25°C : 1.17A
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id : 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 5.45nC @ 10V
Power - Max : 840mW
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOIC
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